CRS10I40B Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Schottky Barrier Diode

Schottky Barrier Diode
CRS10I40B
1. Applications
• Secondary Rectification in Switching Regulators
• Reverse-Current Protection in Mobile Devices
2. Features
(1) Peak forward voltage: V_FM = 0.45 V (max) @I_FM = 1 A
(2) Average forward current: I_F(AV) = 1 A
(3) Repetitive peak reverse voltage: V_RRM = 40 V
(4) Small, thin package suitable for high-density board assembly
Toshiba Nickname: S-FLAT^TM
3. Packaging and Internal Circuit
CRS10I40B
1: Anode
2: Cathode
3-2A1S
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T_a = 25 )
Characteristics
Symbol Note
Rating
Unit
Repetitive peak reverse voltage
V_RRM
40
V
Average forward current
I_F(AV) (Note 1)
1
A
Non-repetitive peak forward surge current
I_FSM (Note 2)
25
Junction temperature
T_j
150

Storage temperature
T_stg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: T_ℓ = 126 , square wave (α = 180°), V_R = 20 V
Note 2: f = 50 Hz, half-sine wave
Start of commercial production
2010-10
1
2014-04-03
Rev.2.0