CRH01_13 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type

TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type
CRH01
Switching Mode Power Supply Applications
• Repetitive peak reverse voltage: V_RRM = 200 V
• Average forward current: I_{F (AV)} = 1.0 A
• Low forward voltage: V_FM = 0.98 V (Max.)
• Very Fast Reverse-Recovery Time: t_rr = 35 ns (Max.)
• Suitable for compact assembly due to small surface-mount package
“S−FLAT^TM” (Toshiba package name)
CRH01
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
V_RRM
200
V
Average forward current
I_F(AV)
1.0
A
Peak one cycle surge forward current
(non-repetitive)
I_FSM
15 (50 Hz)
A
Junction temperature
T_j
−40~150
°C
JEDEC
―
Storage temperature range
T_stg
−40~150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
3-2A1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.013 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Reverse recovery time
Forward recovery time
Thermal resistance
Symbol
V_{FM (1)}
V_{FM (2)}
V_{FM (3)}
I_RRM
t_rr
t_fr
R_{th (j-a)}
Test Condition
I_FM = 0.1 A
I_FM = 0.7 A
I_FM = 1.0 A
V_RRM = 200 V
I_F = 1 A, di/dt = −30 A/μs
I_F = 1 A
Device mounted on a ceramic board
(soldering land: 2 mm × 2 mm)
Device mounted on a glass-epoxy board
(soldering land: 6 mm × 6 mm)
Min Typ. Max Unit
⎯ 0.71 ⎯
⎯ 0.86 ⎯
V
⎯ 0.90 0.98
⎯
⎯
10
μA
⎯
⎯
35
ns
⎯
⎯ 100 ns
⎯
⎯
65
°C/W
⎯
⎯
130
Start of commercial production
1999-07
1
2013-11-01