CRG09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – General Purpose Rectifier Applications

TOSHIBA Rectifier Silicon Diffused Type
CRG09
CRG09
General Purpose Rectifier Applications
• Repetitive peak reverse voltage: V_RRM = 400 V
• Average forward current: I_{F (AV)} = 1.0 A
• Forward voltage: V_FM = 1.1 V (max) (@I_FM = 0.7 A)
• High ESD Capability
• Suitable for high-density board assembly due to the use of a small
surface-mount package, S−FLAT^TM
Unit: mm
②
Absolute Maximum Ratings (Ta = 25°C)
0.9 ± 0.1
0.16
+ 0.2
①
1.6 − 0.1
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
Average forward current
V_RRM
400
V
I_F(AV)
1.0 (Note 1)
A
① ANODE
② CATHODE
Non-repetitive peak surge current
I_FSM
15 (50 Hz)
A
Junction temperature
T_j
−40 to 150
°C
Storage temperature
T_stg
−40 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
JEITA
TOSHIBA
―
―
3-2A1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.013 g (typ.)
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ta = 66°C
Device mounted on a ceramic board
Board size: 50 mm × 50 mm
Soldering size: 2 mm × 2 mm
Board thickness: 0.64 mm
1
2010-08-05