CRG03 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – General Purpose Rectifier Applications

TOSHIBA Rectifier Silicon Diffused Type
CRG03
General Purpose Rectifier Applications
• Average forward current: I_{F (AV)} = 1.0 A
• Repetitive peak reverse voltage: V_RRM = 400 V
• Suitable for compact assembly due to small surface-mount package
“S−FLAT^TM” (Toshiba package name)
CRG03
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive Peak Reverse Voltage
Average Forward Current
Peak One Cycle Surge Forward
Current (Non−Repetitive)
V_RRM
400
V
I_{F (AV)}
1.0（Note）
A
I_FSM
15.0 (50Hz)
A
16.5 (60Hz)
Junction Temperature
Storage Temperature Range
T_j
−40~150
°C
T_stg
−40~150
°C
Note: 1 Ta = 56°C
Device mounted on a ceramic board
board size: 50 mm × 50 mm
soldering land: 2 mm × 2 mm
board thickness 0.64t
JEDEC
―
JEITA
―
TOSHIBA
3-2A1A
Weight: 0.013 g (typ.)
Note 2:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Thermal resistance
Symbol
V_FM(1)
V_FM(2)
V_FM(3)
I_RRM
R_{th (j-a)}
R_{th (j-ℓ)}
Test Condition
I_FM = 0.1 A (Pulse test)
I_FM = 0.7 A (Pulse test)
I_FM = 1.0 A (Pulse test)
V_RRM = 400 V (Pulse test)
Device mounted on a ceramic board
Board size: 50 mm × 50 mm
Soldering land: 2 mm × 2 mm
Board thickness: 0.64t
Device mounted on a glass-epoxy
board
Board size: 50 mm × 50 mm
Soldering land: 6 mm × 6 mm
Board thickness: 1.6t
―
Min Typ. Max Unit
⎯ 0.86 ⎯
V
⎯ 0.97 1.1
V
⎯
1.0
⎯
V
⎯
⎯
10
μA
⎯
⎯
65
°C/W
⎯
⎯
130
⎯
⎯
20 °C/W
1
2006-11-06