CRF03 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Switching Mode Power Supply Applications

TOSHIBA Fast Recovery Diode Silicon Diffused Type
CRF03
Switching Mode Power Supply Applications
• Repetitive peak reverse voltage: V_RRM = 600 V
• Average forward current: I_{F (AV)} = 0.7 A
• Low forward voltage: V_FM = 2.0 V (max.)
• Very fast reverse-recovery time: t_rr = 100 ns (max.)
• Suitable for compact assembly due to its small surface-mount
package, the “S−FLAT^TM” (Toshiba package name)
CRF03
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
Average forward current
Peak one-cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature range
V_RRM
I_F(AV)
I_FSM
T_j
T_stg
600
V
0.7
(Note 1)
A
10 (50 Hz)
A
−40~150
°C
−40~150
°C
Note 1:
Ta = 76°C: Device mounted on a ceramic board
Board size: 50 mm × 50 mm,
Soldering Land size: 2 mm × 2 mm
Board thickness: 0.64 t
Rectangular waveform (α = 180°)
JEDEC
―
JEITA
―
TOSHIBA
3-2A1A
Weight: 0.013 g (typ.)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-07