CMZB68 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Communication, Control and Measurement Equipment Constant Voltage Regulation

CMZB68~CMZB390
TOSHIBA Zener Diode Silicon Junction
CMZB68~CMZB390
○ Communication, Control and
Measurement Equipment
○ Constant Voltage Regulation
• Power dissipation: P = 1.0 W
• Zener voltage: V_Z = 68 to 390 V
• Suitable for high-density board assembly due to the use of a small
surface-mount package, M−FLAT^TM
Unit: mm
②
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
①
0.16
1.75 ± 0.1
+ 0.2
2.4 − 0.1
Power dissipation
Junction temperature
Storage temperature range
P
1.0 (Note 1) W
T_j
150
°C
T_stg
−55 to 150
°C
① ANODE
② CATHODE
Note :
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
―
reliability significantly even if the operating conditions (i.e.
JEITA
―
operating temperature / current / voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
3-4E1A
Please design the appropriate reliability upon reviewing the
Weight: 0.023 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1:
Ta = 40°C
Device mounted on a glass-epoxy board
Board size: 50 mm × 50 mm
Land pattern: 6 mm × 6 mm
Board thickness: 1.6 mm
Land pattern dimensions for reference only
Unit: mm
1.4
3.0
1.4
1
2011-06-20