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CMS30I40A Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – Schottky Barrier Diode
Schottky Barrier Diode
CMS30I40A
1. Applications
• Secondary Rectification in Switching Regulators
• Reverse-Current Protection in Mobile Devices
2. Features
(1) Peak forward voltage: VFM = 0.55 V (max)@IFM = 3.0 A
(2) Average forward current: IF(AV) = 3.0 A
(3) Repetitive peak reverse voltage: VRRM = 40 V
(4) Small, thin package suitable for high-density board assembly
Toshiba Nickname: M-FLATTM
3. Packaging and Internal Circuit Pin Assignment
CMS30I40A
3-4E1S
1: Anode
2: Cathode
Start of commercial production
2010-10
1
2014-04-01
Rev.2.0