CMS17 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching Mode Power Supply Applications

TOSHIBA Schottky Barrier Diode
CMS17
CMS17
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Unit: mm
• Forward voltage: V_FM = 0.48 V (max)
• Average forward current: I_{F (AV)} = 2.0 A
• Repetitive peak reverse voltage: V_RRM = 30 V
• Suitable for compact assembly due to a small surface-mount package:
“M−FLAT^TM” (Toshiba package name)”
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Repetitive peak reverse voltage
Average forward current
Nonrepetitive peak surge current
Junction temperature
Storage temperature range
V_RRM
I_{F (AV)}
I_FSM
T_j
T_stg
30
V
2.0 (Note 1) A
30 (50 Hz)
A
−40~150
°C
−40~150
°C
Note 1:
Note 2:
Ta = 77°C
Device mounted on a ceramic board
Board size: 50 mm × 50 mm
Soldering size: 2 mm × 2 mm
JEDEC
⎯
JEITA
⎯
Board thickness: 0.64 t
Rectangular waveform (α = 180°), V_R = 15 V
TOSHIBA
3-4E1A
Using continuously under heavy loads (e.g. the application of
Weight: 0.023 g (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Peak forward voltage
Peak repetitive reverse current
Junction capacitance
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to lead)
Symbol
Test Condition
Min Typ. Max Unit
V_{FM (1)} I_FM = 1.0 A (pulse test)
⎯
V_{FM (2)} I_FM = 2.0 A (pulse test)
⎯
I_{RRM (1)} V_RRM = 5 V (pulse test)
⎯
I_{RRM (2)} V_RRM = 30 V (pulse test)
⎯
C_j
V_R = 10 V, f = 1.0 MHz
⎯
Device mounted on a ceramic board
(board size: 50 mm × 50 mm)
(soldering land: 2 mm × 2 mm)
⎯
(board thickness: 0.64 t)
Device mounted on a glass-epoxy board
R_{th (j-a)}
(board size: 50 mm × 50 mm)
(soldering land: 6 mm × 6 mm)
⎯
(board thickness: 1.6 t)
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 2.1 mm × 1.4 mm)
⎯
(board thickness: 1.6 t)
0.42 ⎯
V
0.45 0.48
0.8
⎯
μA
10 100
90
⎯
pF
⎯
60
⎯
135 °C/W
⎯
210
R_{th (j-ℓ)}
⎯
⎯
⎯
16 °C/W
1
2006-11-13