CMS08 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type

TOSHIBA Schottky Barrier Rectifier Schottky Barrier Type
CMS08
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
CMS08
Unit: mm
· Forward voltage: VFM = 0.37 V (max)
· Average forward current: IF (AV) = 1.0 A
· Repetitive peak reverse voltage: VRRM = 30 V
· Suitable for compact assembly due to small surface-mount package
“M−FLAT^TM” (Toshiba package name)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
Average forward current
V_RRM
30
V
I_{F (A(VN) ote)}
1.0
(Ta = 51°C)
A
I_{F (AV)}
1.0
(Tℓ = 106°C)
A
Peak one cycle surge forward current
(non-repetitive)
I_FSM
25 (50 Hz)
A
Junction temperature
Storage temperature
T_j
-40~125
°C
T_stg
-40~150
°C
Note: Device mounted on a ceramic board
(board size: 50 mm ´ 50 mm, soldering land: 2 mm ´ 2 mm)
JEDEC
―
JEITA
―
TOSHIBA
3-4E1A
Weight: 0.023 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance
Thermal resistance
Symbol
V_{FM (1)}
V_{FM (2)}
V_{FM (3)}
I_RRM
I_RRM
C_j
R_{th (j-a)}
R_{th (j-ℓ)}
Test Condition
Min
I_FM = 0.1 A
¾
I_FM = 0.5 A
¾
I_FM = 1.0 A
¾
V_RRM = 5 V
¾
V_RRM = 30 V
¾
V_R = 10 V, f = 1.0 MHz
¾
Device mounted on a ceramic board
(soldering land: 2 mm ´ 2 mm)
¾
Device mounted on a glass-epoxy
board
¾
(soldering land: 6 mm ´ 6 mm)
¾
¾
Typ.
0.23
0.29
0.32
0.04
0.38
70
¾
¾
¾
Max Unit
¾
¾
V
0.37
¾
mA
1.5
¾
pF
60
°C/W
135
16 °C/W
1
2003-02-17