CMH07_13 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type

CMH07
TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type
CMH07
Switching Mode Power Supply Applications
• Repetitive peak reverse voltage: V_RRM = 200 V
• Average forward current: I_{F (AV)} = 2.0 A
• Low forward voltage: V_FM = 0.98 V (Max) @IFM = 2.0 A
• Very Fast Reverse-Recovery Time: trr = 35 ns (Max)
• Suitable for compact assembly due to small surface-mount package
“M−FLAT^TM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature range
V_RRM
I_{F (AV)}
I_FSM
T_j
T_stg
200
V
2.0 (Note1) A
40 (50 Hz)
A
−40 to 150
°C
−40 to 150
°C
Note 1:
Note2:
Ta＝35°C Device mounted on a ceramic board
board size: 50 mm × 50 mm
soldering land: 2mm ×2 mm
glass-epoxy board thickness 0.64 mm
JEDEC
―
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
3-4E1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.023 g (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Peak repetitive reverse current
Reverse recovery time
Forward recovery time
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to lead)
Symbol
V_{FM (1)}
V_{FM (2)}
V_{FM (3)}
I_RRM
t_rr
t_fr
R_{th (j-a)}
R_{th (j-ℓ)}
Test Condition
I_FM = 0.1 A (pulse test)
I_FM = 1.0 A (pulse test)
I_FM = 2.0 A (pulse test)
V_RRM = 200 V (pulse test)
I_F = 1 A, di/dt = −30 A/μs
I_F = 1 A
Device mounted on a ceramic board
(board size: 50 mm × 50 mm)
(soldering land: 2 mm × 2 mm)
(board thickness: 0.64 mm)
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 6 mm × 6 mm)
(board thickness: 1.6 mm)
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 2.1 mm × 1.4 mm)
(board thickness: 1.6 mm)
⎯
Min Typ. Max Unit
⎯ 0.68 ⎯
⎯ 0.83 ⎯
V
⎯ 0.91 0.98
⎯
⎯
10
μA
⎯
⎯
35
ns
⎯
⎯
100
ns
⎯
⎯
60
⎯
⎯
135 °C/W
⎯
⎯
210
⎯
⎯
16 °C/W
Start of commercial production
2002-12
1
2013-11-01