CMH04 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching Mode Power Supply Applications

TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type
CMH04
CMH04
Switching Mode Power Supply Applications
Unit: mm
• Repetitive peak reverse voltage: V_RRM = 200 V
• Average forward current: I_{F (AV)} = 1.0 A
• Low forward voltage: V_FM=0.98 V (Max)
• Very Fast Reverse-Recovery Time: trr = 35 ns (Max)
• Suitable for compact assembly due to small surface-mount package
“M−FLAT^TM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
V_RRM
200
V
Average forward current
I_{F (AV)}
1.0（Note）
A
Peak one cycle surge forward current
(non-repetitive)
I_FSM
20 (50 Hz)
A
Junction temperature
T_j
−40~150
°C
Storage temperature range
T_stg
−40~150
°C
Note 1:
Note 2:
Ta=26°C Device mounted on a glass-epoxy board
board size: 50 mm × 50 mm
JEDEC
―
soldering land: 6 mm ×6 mm
glass-epoxy board thickness: 1.6 t
JEITA
―
Using continuously under heavy loads (e.g. the application of
TOSHIBA
3-4E1A
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.023 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Peak repetitive reverse current
Reverse recovery time
Forward recovery time
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to lead)
Symbol
V_{FM (1)}
V_{FM (2)}
V_{FM (3)}
I_RRM
t_rr
t_fr
R_{th (j-a)}
R_{th (j-ℓ)}
Test Condition
I_FM = 0.1 A (pulse test)
I_FM = 0.7 A (pulse test)
I_FM = 1.0 A (pulse test)
V_RRM = 200 V (pulse test)
I_F = 1 A, di/dt = −30 A/μs
I_F = 1 A
Device mounted on a ceramic board
(board size: 50 mm × 50 mm)
(soldering land: 2 mm × 2 mm)
(board thickness: 0.64 t)
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 6 mm × 6 mm)
(board thickness: 1.6 t)
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land: 2.1 mm × 1.4 mm)
(board thickness: 1.6 t)
⎯
Min Typ. Max Unit
⎯ 0.70 ⎯
⎯ 0.84 ⎯
V
⎯ 0.87 0.98
⎯
⎯
10
μA
⎯
⎯
35
ns
⎯
⎯
100
ns
⎯
⎯
60
pF
⎯
⎯
135
°C/W
⎯
⎯
210
⎯
⎯
16 °C/W
1
2006-11-08