CLS02 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching-Mode Power Supply (Secondary-Rectification) Applications (Low Voltage)

TOSHIBA Schottky Barrier Diode
CLS02
Switching-Mode Power Supply (Secondary-Rectification)
Applications (Low Voltage)
DC/DC Converter Applications
• Forward voltage: V_FM = 0.55 V (max)
• Average forward current: I_{F (AV)} = 10 A
• Repetitive peak reverse voltage: V_RRM = 40 V
• Suitable for compact assembly due to small surface-mount package:
“L−FLAT^TM” (Toshiba package name)
CLS02
4 ± 0.2
1.5 ± 0.1
②
Unit: mm
0.6 ± 0.1
1.2 ± 0.1
①
2.7 ± 0.2
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
Average forward current
Non-repetitive peak surge current
Junction temperature
Storage temperature range
V_RRM
40
V
I_{F (AV)}
10 (Note.1)
A
I_FSM
100 (50 Hz)
A
T_j
−40~125
°C
T_stg
−40~150
°C
Note1: Tℓ = 75°C
Rectangular waveform (α = 180°), V_R = 20 V
① ANODE
② CATHODE
JEDEC
⎯
JEITA
⎯
TOSHIBA
3-4F1A
Weight: 0.15 g (typ.)
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Peak repetitive reverse current
Junction capacitance
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to lead)
Symbol
V_{FM (1)}
V_{FM (2)}
V_{FM (3)}
I_{RRM (1)}
I_{RRM (2)}
C_j
R_{th (j-a)}
Test Condition
I_FM = 3.0 A (pulse test)
I_FM = 5.0 A (pulse test)
I_FM = 10 A (pulse test)
V_RRM = 5 V (pulse test)
V_RRM = 40 V (pulse test)
V_R = 10 V, f = 1.0 MHz
Device mounted on a glass-epoxy
board
(board size: 50 mm × 50 mm)
(board thickness: 1.6 t)
(soldering land)
Cathode 5.7 mm × 6.2 mm
Anode 4.5 mm × 3.4 mm
R_{th (j-ℓ)}
⎯
1
Min Typ. Max Unit
⎯ 0.36 ⎯
⎯ 0.41 ⎯
V
⎯
0.5 0.55
⎯
4.0
⎯
μA
⎯ 0.03 1.0 mA
⎯ 420 ⎯
pF
⎯
⎯
100 °C/W
⎯
⎯
5 °C/W
2007-11-06