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CES520 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Switching | |||
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Schottky Barrier Diode Silicon Epitaxial
CES520
1. Applications
⢠High-Speed Switching
2. Features
(1) Low reverse current: IR(2) = 5 µA (max)
(2) Small and compact ESC package, equivalent to SOD-523 and SC-79 packages.
3. Packaging and Internal Circuit
CES520
1: Cathode
2: Anode
ESC
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25î)
Characteristics
Symbol Note
Rating
Unit
Reverse voltage
VR
î¥
30
V
Peak forward current
IFM
î¥
300
mA
Average rectified current
IO
î¥
200
Non-repetitive peak forward surge current
IFSM (Note 1)
1
A
Power dissipation
PD (Note 2)
150
mW
Junction temperature
Tj
î¥
125
î
Storage temperature
Tstg
î¥
-55 to 125
Operating temperature
Topr
î¥
-40 to 100
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Measured with a 10ms pulse.
Note 2: Mounted on a glass epoxy circuit board of 20 mm à 20 mm, Pad dimension of 4 mm à 4 mm.
1
2012-05-24
Rev.3.0
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