CBS05F30_14 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Schottky Barrier Diode Silicon Epitaxial

Schottky Barrier Diode Silicon Epitaxial
CBS05F30
1. Applications
• High-Speed Switching
2. Features
(1) Low forward voltage: V_F(3) = 0.38 V (typ.)
(2) Thin and compact packaging: Height = 0.40mm(max)
3. Packaging and Internal Circuit
CBS05F30
1: Cathode
2: Anode
CST2B
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol Note
Rating
Unit
Reverse voltage
V_R

30
V
Average rectified current
I_O (Note 1)
500
mA
Non-repetitive peak forward surge current
I_FSM (Note 2)
3
A
Junction temperature
T_j

125

Storage temperature
T_stg

-55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a glass-epoxy circuit board of 20 mm × 20 mm, Pad dimension of 4 mm × 4 mm.
Note 2: Measured with a 10 ms pulse.
Start of commercial production
2010-12
1
2014-02-24
Rev.5.0