CBS05F30 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
CBS05F30
High-Speed Switching Application
CBS05F30
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
Average forward current
Surge current (10ms)
Junction temperature
Storage temperature range
V_R
I_O
I_FSM
T_j
T_stg
30
V
500 *
mA
3
A
125
°C
−55 to 125
°C
*: Mounted on a glass-epoxy circuit board of 20 mm × 20 mm, pad
dimensions of 4 mm × 4 mm.
0.7±0.02
0.8±0.05
0.05_±0.03
0.38+-00..0032
Note: Using continuously under heavy loads (e.g. the application of high
CST2B
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
JEDEC
―
JEITA
―
TOSHIBA
1-1V1B
Weight: 0.7 mg (typ.)
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
C_T
Test
Circuit
Test Condition
― I_F = 10 mA
― I_F = 100 mA
― I_F = 500 mA
― V_R = 30 V
― V_R = 0 V, f = 1 MHz
Min Typ. Max Unit
― 0.23 ―
― 0.31 ―
V
― 0.38 0.45
―
5
50
μA
⎯ 118 ⎯
pF
Marking
73
Equivalent Circuit (Top View)
1
2010-05-11