5JL2CZ47_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – SWITCHING MODE POWER SUPPLY APPLICATION

5JL2CZ47
TOSHIBA HIGH EFFICIENCY DIODE STACE (HED) SILICON EPITAXIAL TYPE
5JL2CZ47
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
z Repetitive Peak Reverse Voltage : V_RRM = 600 V
z Average Output Rectified Current : I_O = 5 A
z Ultra Fast Reverse-Recovery Time : t_rr = 50 ns (Max.)
z Low Switching Losses and Output Noise
Unit: mm
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
Average Output Rectified Current
Peak One Cycle Surge Forward
Current (Sin Wave)
V_RRM
600
V
I_O
5
A
I_FSM
25 (50Hz)
A
27.5 (60Hz)
Junction Temperature
T_j
−40~150
°C
Storage Temperature Range
Screw Torque
T_stg
−40~150
°C
JEDEC
―
―
0.6
N·m
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
TOSHIBA
―
12-10C1A
temperature, etc.) may cause this product to decrease in the
Weight: 2.0 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Peak Forward Voltage
(Note 1)
Repetitive Peak Reverse Current
(Note 1)
Reverse Recovery time (Note 1)
Forward Recovery time (Note 1)
Thermal Resistance
V_FM
I_RRM
t_rr
t_fr
R_{th (j−c)}
I_FM = 2.5A
V_RRM = 600V
I_F = 2A, di / dt = −20A / μs
I_F = 1A
Total DC, Junction to Case
Note 1: A value applied to one cell.
POLARITY
TYP. MAX UNIT
―
2.0
V
―
50
μA
―
50
ns
― 150 ns
―
3.8 °C / W
1
2006-11-08