5GWJZ47_06 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – HIGH SPEED RECTIFIER APPLICATION

5GWJZ47
TOSHIBA SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE
5GWJZ47
HIGH SPEED RECTIFIER APPLICATION
Unit: mm
z Repetitive Peak Reverse Voltage
z Average Forward Current
z Low Forward Voltage
: V_RRM = 40 V
: I_{F (AV)} = 5 A
: V_FM = 0.55 V (Max.)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
Average Forward Current
Peak One Cycle Surge Forward
Current (Non−Repetitive)
V_RRM
40
V
I_{F (AV)}
5
A
I_FSM
50 (50Hz)
A
60 (60Hz)
Junction Temperature
Storage Temperature Range
T_j
−40~125
°C
T_stg
−40~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
3-10C3A
Weight: 2.0 g (typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
TYP. MAX UNIT
Peak Forward Voltage
Repetitive Peak Reverse Current
Junction Capacitance
Thermal Resistance (With Heat Sink)
V_FM
I_RRM
C_j
R_{th (j−c)}
I_FM = 5A
V_RRM = 40V
V_R = 10V, f = 1MHz
Junction to Case
― 0.55
―
3.5
200 ―
(Note 1) ―
4.0
Note 1: Apply silicone greace to the contact surface between heat sink and case of rectifier.
V
mA
pF
°C / W
MARKING
Abbreviation Code
5GWJZ47
Part No.
5GWJZ47
5GWJZ47
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-13