5GWJ2CZ47C_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – SWITCHING MODE POWER SUPPLY APPLICATION

5GWJ2CZ47C
TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE
5GWJ2CZ47C
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
z Repetitive Peak Reverse Voltage : V_RRM = 40 V
z Average Output Rectified Current : I_O = 5 A
z Low Switching Losses and Output Noise
Unit: mm
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
V_RRM
40
V
Repetitive Peak Reverse Surge
Voltage
(Note 2)
V_RRSM
48
V
Average Output Rectified Current
Peak One Cycle Surge Forward
Current (Sin Wave)
I_O
I_FSM
5
A
50 (50Hz)
A
55 (60Hz)
Junction Temperature
T_j
−40~125
°C
Storage Temperature Range
Screw Torque
T_stg
−40~150
°C
―
0.6
N·m
JEDEC
―
Note 1: Pulse Width (t_w) ≤500ns, duty (t_w / T) ≤1 / 25
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
TOSHIBA
12-10C1A
Weight: 2.0 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Peak Forward Voltage
(Note 3)
Repetitive Peak Reverse Current
(Note 3)
Junction Capacitance
(Note 3)
Thermal Resistance
SYMBOL
V_FM
I_RRM
C_j
R_{th (j−c)}
TEST CONDITION
I_FM = 2.5A
V_RRM = Rated
V_R = 10V, f = 1.0MHz
Total DC, Junction to Case
Note 3: A value applied to one cell.
TYP.
―
MAX
0.55
UNIT
V
―
3.5 mA
100 ―
pF
―
3.5 °C / W
POLARITY
1
2006-11-13