3SK294_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TV Tuner, VHF RF Amplifier Application

3SK294
TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type
3SK294
TV Tuner, VHF RF Amplifier Application
Unit: mm
• Superior cross modulation performance
• Low reverse transfer capacitance: C_rss = 20 fF (typ.)
• Low noise figure: NF = 1.4dB (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate 1-source voltage
Gate 2-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
V_G1S
V_G2S
I_D
P_D
T_ch
T_stg
12.5
V
±8
V
±8
V
30
mA
100
mW
125
°C
−55~125
°C
USQ
1.Drain
2.Source
3.Gate1
4.Gate2
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
TOSHIBA
―
2-2K1B
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.006 g (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate 1 leakage current
Gate 2 leakage current
Drain-source voltage
Drain current
Gate 1-source cut-off voltage
Gate 2-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
Test Condition
Min Typ. Max Unit
I_G1SS
I_G2SS
V_DS = 0, V_G1S = ±6 V, V_G2S = 0
V_DS = 0, V_G1S = 0, V_G2S = ±6 V
⎯
⎯
±50
nA
⎯
⎯
±50
nA
V _{(BR) DSX}
V_G1S = −0.5 V, V_G2S = −0.5 V,
I_D = 100 μA
12.5 ⎯
⎯
V
I_DSS
V_DS = 6 V, V_G1S = 0, V_G2S = 4.5 V
⎯
⎯
0.1 mA
V_{G1S (OFF)} V_DS = 6 V, V_G2S = 4.5 V, I_D = 100 μA
0.3
0.9
1.3
V
V_{G2S (OFF)} V_DS = 6 V, V_G2S = 4.0 V, I_D = 100 μA
0.5
1.0
1.5
V
⎪Y_fs⎪
V_DS = 6 V, V_G2S = 4.5 V, I_D = 10 mA,
f = 1 kHz
19.5 23.5
⎯
mS
C_iss
V_DS = 6 V, V_G2S = 4.5 V, I_D = 10 mA,
⎯
2.5
3.1
pF
C_rss
f = 1 MHz
⎯
20
40
fF
G_ps
V_DS = 6 V, V_G2S = 4.5 V, I_D = 10 mA, ^{23.5 26.0}
⎯
dB
NF
f = 500 MHz
⎯
1.4
2.5
dB
1
2007-11-01