3SK195_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TV Tuner, VHF RF Amplifier Applications

3SK195
TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type
3SK195
TV Tuner, VHF RF Amplifier Applications
FM Tuner Applications
Unit: mm
• Superior cross modulation performance.
• Low reverse transfer capacitance: C_rss = 0.015 pF (typ.)
• Low noise figure: NF = 1.1dB (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DS
13.5
V
Gate 1-source voltage
V_G1S
±8
V
Gate 2-source voltage
V_G2S
±8
V
Drain current
I_D
30
mA
Drain power dissipation
P_D
150
mW
Channel temperature
T_ch
125
°C
Storage temperature range
T_stg
−55~125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-3J1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.013 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate 1 leakage current
Gate 2 leakage current
Drain-source voltage
Drain current
Gate 1-source cut-off voltage
Gate 2-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
Test Condition
Min Typ. Max Unit
I_G1SS
V_DS = 0, V_G1S = ±4 V, V_G2S = 0
⎯
⎯
±50
nA
I_G2SS
V_DS = 0, V_G1S = 0, V_G2S = ±4 V
⎯
⎯
±50
nA
V _{(BR) DSX} V_G1S = −4 V, V_G2S = −4 V, I_D = 100 μA 13.5
⎯
⎯
V
I_DSS
V_DS = 6 V, V_G1S = 0, V_G2S = 4 V
0
⎯
0.1 mA
V_{G1S (OFF)} V_DS = 6 V, V_G2S = 4 V, I_D = 100 μA
0
⎯
1.0
V
V_{G2S (OFF)} V_DS = 6 V, V_G1S = 4 V, I_D = 100 μA
0
⎯
1.2
V
⎪Y_fs⎪
V_DS = 6 V, V_G2S = 4 V, I_D = 10 mA,
f = 1 kHz
⎯
13
⎯
mS
C_iss
C_rss
G_ps
NF
V_DS = 6 V, V_G2S = 4 V, I_D = 10 mA,
f = 1 MHz
V_DS = 6 V, V_G2S = 4 V, I_D = 10 mA,
f = 200 MHz (Figure 1)
2.0
2.7
3.4
pF
⎯ 0.015 0.03 pF
22
27
⎯
dB
⎯
1.1
2.2
dB
1
2007-11-01