30QWK2CZ47_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching Type Power Supply Application

30QWK2CZ47
TOSHIBA Schottky Barrier Rectifier Stack Trench Schottky Barrier Type
30QWK2CZ47
Switching Type Power Supply Application
Converter & Chopper Application
Unit: mm
• Repetitive peak reverse voltage: V_RRM = 120 V
• Peak Forward Voltage: V_FM = 0.85 V (max)
• Average output recified current: I_O = 30 A
• Low switching losses and output noise
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
Average output recified current
Peak one cycle surge forward current
(non-repetitive, sine wave)
Junction temperature
Storage temperature range
Screw Torque
V_RRM
I_O
I_FSM
T_j
T_stg
⎯
120
30
250 (50 Hz)
−40~150
−40~150
0.6
V
A
A
°C
°C
Nï½¥m
JEDEC
JEITA
TOSHIBA
―
―
12-10C1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 2.0 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance
V_FM
I_RRM
C_j
R_{th (j-c)}
I_FM = 15 A
V_RRM = Rated (120 V)
V_R = 10 V, f = 1.0 MHz
Total DC, Junction to case
Note: V_FM, I_RRM, C_j: A value applied to one cell.
Polarity
Min Typ. Max Unit
⎯
⎯
0.85
V
⎯
⎯
50
μA
⎯
227
⎯
pF
⎯
⎯
2.5 °C/W
1
2006-11-10