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30GWJ2C42C_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – SWITCHING MODE POWER SUPPLY APPLICATON
30GWJ2C42C
TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE
30GWJ2C42C
SWITCHING MODE POWER SUPPLY APPLICATON
CONVERTER & CHOPPER APPLICATION
z Repetitive Peak Reverse Voltage : VRRM = 40 V
z Average Output Rectified Current : IO = 30 A
z Low Switching Losses and Output Noise
Unit: mm
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
40
V
Repetitive Peak Reverse Surge
Voltage
(Note 1)
VRRSM
48
V
Average Output Rectified Current
IO
30
A
Peak One Cycle Surge Forward
Current (Sine Wave)
IFSM
300 (50Hz)
A
330 (60Hz)
Junction Temperature
Storage Temperature Range
Screw Torque
Tj
−40~125
°C
Tstg
−40~150
°C
JEDEC
―
―
0.8
N·m
JEITA
―
Note 1:
Note 2:
Pulse Width (tw) ≤500ns, duty (tw / T) ≤1 / 25
Using continuously under heavy loads (e.g. the application of
TOSHIBA
12-16D1A
Weight: 4.85 g (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Peak Forward Voltage
(Note 3)
Repetitive Peak Reverse Current
(Note 3)
Junction Capacitance
(Note 3)
Thermal Resistance
VFM
IRRM
Cj
Rth (j-c)
IFM = 15A
VRRM = Rated
VR = 10V, f = 1.0MHz
Total DC, Junction to Case
Note 3: A value applied to one cell.
POLARITY
MIN TYP. MAX
―
0.55
V
―
15
mA
600 ―
pF
―
1.0 °C / W
1
2006-11-10