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2SK882_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type FM Tuner, VHF RF Amplifier Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK882
2SK882
FM Tuner, VHF RF Amplifier Applications
Unit: mm
• Low reverse transfer capacitance: Crss = 0.025 pF (typ.)
• Low noise figure: NF = 1.7dB (typ.)
• High power gain: Gps = 28dB (typ.)
• Recommend operation voltage: 5~15 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
VDS
VGS
ID
PD
Tch
Tstg
20
V
±5
V
30
mA
100
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
TOSHIBA
SC-70
2-2E1C
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.006 g (typ.)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Drain-source voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
IGSS
VDS = 0, VGS = ±5 V
VDSX
VGS = −4 V, ID = 100 μA
IDSS
VDS = 10 V, VGS = 0
(Note)
VGS (OFF) VDS = 10 V, ID = 100 μA
⎪Yfs⎪
VDS = 10 V, VGS = 0, f = 1 kHz
Ciss
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
Gps
VDS = 10 V, f = 100 MHz (Figure 1)
NF
Note: IDSS classification Y: 3.0~7.0 mA, GR: 6.0~14.0 mA
Min Typ. Max Unit
⎯
⎯
±50
nA
20
⎯
⎯
V
3
⎯
14
mA
⎯
⎯
−2.5
V
⎯
10
⎯
mS
⎯
3.0
4.3
pF
⎯ 0.025 0.04 pF
20
28
⎯
dB
⎯
1.7
3.0
dB
1
2007-11-01