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2SK881_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel Junction Type FM Tuner Applications | |||
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK881
FM Tuner Applications
VHF Band Amplifier Applications
2SK881
Unit: mm
⢠Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
⢠High forward transfer admittance: |Yfs| = 9 mS (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDO
IG
PD
Tj
Tstg
â18
V
10
mA
100
mW
125
°C
â55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
â
JEITA
SC-70
TOSHIBA
2-2E1C
Weight: 0.006 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
IGSS
VGS = â0.5 V, VDS = 0
V (BR) GDO IG = â10 μA
IDSS
VGS = 0, VDS = 10 V
(Note)
VGS (OFF)
âªYfsâª
Ciss
Crss
Gps
NF
VDS = 10 V, ID = 1 μA
VGS = 0, VDS = 10 V, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, VGS = 0, f = 1 MHz
VDD = 10 V, f = 100 MHz (Figure 1)
VDD = 10 V, f = 100 MHz (Figure 1)
Note: IDSS classification O: 1.0~3.0, Y: 2.5~6.0, GR: 5.0~10.0
Min Typ. Max Unit
â¯
â¯
â10
nA
â18 â¯
â¯
V
1.0
â¯
10
mA
â0.4
â¯
â4.0
V
â¯
9
â¯
mS
â¯
6.0
â¯
pF
â¯
⯠0.15 pF
10
18
â¯
dB
â¯
2.5
3.5
dB
1
2007-11-01
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