2SK879-R Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – General Purpose and Impedance Converter and Condenser Microphone Applications

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK879
General Purpose and Impedance Converter and
Condenser Microphone Applications
2SK879
Unit: mm
• High breakdown voltage: V_GDS = −50 V
• High input impedance: I_GSS = −1.0 nA (max) (V_GS = −30 V)
• Low noise: NF = 0.5dB (typ.) (R_G = 100 kΩ, f = 120 Hz)
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
Rating
Unit
V_GDS
I_G
P_D
T_j
T_stg
−50
V
10
mA
100
mW
125
°C
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1B
Weight: 0.006 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Symbol
Test Condition
I_GSS
V_GS = −30 V, V_DS = 0
V _{(BR) GDS} V_DS = 0, I_G = −100 μA
I_DSS
(Note)
V_DS = 10 V, V_GS = 0
V_{GS (OFF)} V_DS = 10 V, I_D = 0.1 μA
⎪Y_fs⎪
V_DS = 10 V, V_GS = 0, f = 1 kHz
C_iss
V_DS = 10 V, V_GS = 0, f = 1 MHz
C_rss
V_GD = −10 V, I_D = 0, f = 1 MHz
NF
V_DS = 15 V, V_GS = 0
R_G = 100 kΩ, f = 120 Hz
Min Typ. Max Unit
⎯
⎯ −1.0 nA
−50 ⎯
⎯
V
0.3
⎯
6.5 mA
−0.4
⎯
−5.0
V
1.2
⎯
⎯
mS
⎯
8.2
⎯
pF
⎯
2.6
⎯
pF
⎯
0.5
⎯
dB
Note: I_DSS classification R: 0.30~0.75 mA, O: 0.60~1.40 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
Marking
1
2007-11-01