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2SK4115 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Switching Regulator Applications | |||
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2SK4115
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ï- MOSâ
£)
2SK4115
Switching Regulator Applications
⢠Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)
⢠High forward transfer admittance: âªYfs⪠= 5.0 S (typ.)
⢠Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
⢠Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
15.9max.
Ф3.2±0.2
Absolute Maximum Ratings (Ta = 25°C)
2.0±0.3
Characteristic
Symbol
Rating
Unit
1.0
ï¼0.3
ï¼0.25
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
900
V
900
V
±30
V
7
A
21
150
W
491
mJ
7
A
15
mJ
150
°C
â55~150
°C
5.45±0.2
5.45±0.2
12 3
1. GATE
2. DRAIN (HEATSINK)
3. SOURCE
JEDEC
â
JEITA
SC-65
TOSHIBA
2â16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (âHandling Precautionsâ/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
0.833
50
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C
1
during use of the device.
Note 2: VDD = 90 V, Tch = 25°C, L = 18.4 mH, RG = 25 Ω, IAR = 7 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
3
This transistor is an electrostatic-sensitive device. Handle with care.
1
2007-07-24
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