2SK4108 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N-Channel MOS Type Switching Regulator Applications

2SK4108
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4108
Switching Regulator Applications
Unit: mm
z Low drain−source ON resistance : R_{DS (ON)} = 0. 21Ω (typ.)
z High forward transfer admittance : |Y_fs| = 14 S (typ.)
z Low leakage current
: I_DSS = 100 μA (max) (V_DS = 500 V)
z Enhancement mode
: V_th = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
500
V
500
V
±30
V
20
A
80
A
150
W
960
mJ
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
Avalanche current
I_AR
Repetitive avalanche energy (Note 3)
E_AR
Channel temperature
T_ch
Storage temperature range
T_stg
20
A
15
mJ
150
°C
−55~150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-16C1B
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 4.6 g (typ.)
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
R_{th (ch−c)}
R_{th (ch−a)}
0.833
50
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 4.08 mH, R_G = 25 Ω, I_AR = 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2007-06-29