2SK4034 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator, DC-DC Converter Applications Motor Drive Applications

2SK4034
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ)
2SK4034
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
Unit: mm
• Low drain-source ON-resistance: R_{DS (ON)} = 4.2 mΩ(typ.)
• High forward transfer admittance: |Y_fs| = 110 S (typ.)
• Low leakage current: I_DSS = 100 μA (V_DS = 60 V)
• Enhancement mode: V_th = 1.5 to 2.5 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t ≤ 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
60
V
60
V
±20
V
75
A
300
125
W
322
mJ
75
A
12.5
mJ
150
°C
−55 to 150
°C
JEDEC
⎯
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
R_{th (ch-c)}
Max
1.0
Unit
°C/W
Note: Use the S1 pin to return the gate
signal to source. Board traces should
be designed so the main current flows
to the S2 pin.
Note 1: Ensure that the channel temperature does not exceed 150°C.
4
Note 2: V_DD = 25 V, T_ch = 25°C (initial), L = 78 μH, R_G = 25 Ω, I_AR = 75 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
1
Note 4: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even ²
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
3
are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/”Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29