2SK4026_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator Applications

2SK4026
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS V)
2SK4026
Switching Regulator Applications
Features
• Low drain-source ON-resistance: R_{DS (ON)} = 6.4 Ω(typ.)
• High forward transfer admittance: |Y_fs| = 0.85 S (typ.)
• Low leakage current: I_DSS = 100 μA (max) (V_DSS = 600 V)
• Enhancement mode: V_th = 2.0 to 4.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
6.5 ± 0.2
5.2 ± 0.2
Unit: mm
0.6 MAX.
0.9
1.1 ± 0.2
0.6 MAX.
Characteristic
Symbol
Rating
Unit
2.3 2.3
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
600
V
600
V
±30
V
1
A
2
20
W
56
mJ
123
0.8 MAX.
1.1 MAX.
0.6 ± 0.15
0.6 ± 0.15
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
2
1
3
Avalanche current
I_AR
Repetitive avalanche energy (Note 3)
E_AR
Channel temperature
T_ch
Storage temperature range
T_stg
1
A
2
mJ
150
°C
−55 to 150
°C
JEDEC
JEITA
TOSHIBA
―
―
2-7J2B
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.36 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please
design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch-c)}
R_{th (ch-a)}
6.25
°C/W
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C, L = 100 mH, I_AR = 1 A, R_G = 25 Ω
Note 3: Repetitive rating: pulse width limited by max channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29