2SK4023_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator, DC/DC Converter

2SK4023
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V)
2SK4023
Switching Regulator, DC/DC Converter
• 4 V gate drive
• Low drain-source ON-resistance: R_{DS (ON)} = 4.0 Ω (typ.)
• High forward transfer admittance: |Y_fs| = 0.8 S (typ.)
• Low leakage current: I_DSS = 100 μA (max) (V_DS = 450 V)
• Enhancement mode: V_th = 2.0 to 4.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
6.5 ± 0.2
5.2 ± 0.2
Unit: mm
0.6 MAX.
0.9
1.1 ± 0.2
0.6 MAX.
Characteristic
Symbol
Rating
Unit
2.3 2.3
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
450
V
450
V
±30
V
1
A
2
20
W
122
mJ
123
0.8 MAX.
1.1 MAX.
0.6 ± 0.15
0.6 ± 0.15
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
2
1
3
Avalanche current
I_AR
1
A
JEDEC
⎯
Repetitive avalanche energy (Note 3)
E_AR
Channel temperature
T_ch
Storage temperature range
T_stg
2
mJ
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
⎯
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch-c)}
R_{th (ch-a)}
6.25
°C/W
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C, L = 203 mH, I_AR = 1 A, R_G = 25Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-07-11