2SK4014 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N-Channel MOS Type DC/DC Converter, Relay Drive and Motor Drive Applications

2SK4014
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
2SK4014
DC/DC Converter, Relay Drive and Motor Drive
Applications
z Low drain−source ON-resistance
: R_{DS (ON)} = 1.6 Ω (typ.)
z High forward transfer admittance
: |Y_fs| = 5.0 S (typ.)
z Low leakage current
: I_DSS = 100 µA (max) (V_DS = 720 V)
z Enhancement mode
: V_th = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
900
V
900
V
±30
V
6
A
18
A
45
W
972
mJ
6
A
15
mJ
150
°C
−55~150
°C
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch−c)}
2.78
°C / W
Thermal resistance, channel to
ambient
R_{th (ch−a)}
62.5
°C / W
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 49.5 mH, R_G = 25 Ω, I_AR = 6 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
3
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-13