2SK4003_09 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Chopper Regulator, DC-DC Converter and Motor Drive

2SK4003
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI)
2SK4003
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
z Low drain−source ON-resistance: R_{DS (ON)} = 1.7 Ω (typ.)
z Low leakage current: I_DSS = 100 μA (max) (V_DS = 600 V)
z Enhancement mode: V_th = 2.0 to 4.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
6.5 ± 0.2
5.2 ± 0.2
Unit: mm
0.6 MAX.
0.9
1.1 ± 0.2
0.6 MAX.
Characteristic
Symbol
Rating
Unit
2.3 2.3
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
600
V
600
V
±30
V
3
A
12
A
20
W
168
mJ
3
A
2
mJ
150
°C
−55 to 150
°C
123
0.8 MAX.
1.1 MAX.
0.6 ± 0.15
0.6 ± 0.15
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
2
1
3
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to ambient
R_{th (ch−a)}
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 8.2 mH, R_G = 25 Ω, I_AR = 6 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29