2SK4002 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Chopper Regulator, DC/DC Converter and Motor Drive Applications

2SK4002
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V)
2SK4002
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
Unit: mm
z Low drain−source ON-resistance
: R_{DS (ON)} = 4.2 Ω (typ.)
z High forward transfer admittance
: |Y_fs| = 1.7 S (typ.)
z Low leakage current
: I_DSS = 100 μA (max) (V_DS = 600 V)
z Enhancement mode
: V_th = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
６．５±０．２
５．２±０．２
０．９
２．３ ２．３
０．６ MAX．
１．１±０．２
０．６ MAX
Characteristic
Symbol
Rating
Unit
Drain−source voltage
V_DSS
600
V
Drain−gate voltage (R_GS = 20 kΩ)
V_DGR
600
V
Gate−source voltage
V_GSS
±30
V
DC
(Note 1)
I_D
2
A
Drain current
Pulse (t = 1 ms)
(Note 1)
I_DP
5
A
Pulse (t = 100 μs)
(Note 1)
I_DP
8
A
Drain power dissipation (Tc = 25°C)
P_D
Single-pulse avalanche energy
(Note 2)
E_AS
Avalanche current
I_AR
Repetitive avalanche energy (Note 3)
E_AR
Channel temperature
T_ch
Storage temperature range
T_stg
20
W
93
mJ
2
A
2
mJ
150
°C
−55~150
°C
１２３
０．８ MAX．
１．1 MAX．
０．６±０．１５
０．６±０．１５
JEDEC
―
JEITA
―
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
R_{th (ch−c)}
R_{th (ch−a)}
6.25
°C / W
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 41 mH, R_G = 25 Ω, I_AR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-08