2SK3936_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator Applications

2SK3936
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II π-MOS VI)
2SK3936
Switching Regulator Applications
Unit: mm
• Small gate charge: Qg = 60 nC (typ.)
• Fast reverse recovery time: t_rr = 380 ns (typ.)
• Low drain-source ON-resistance: R_{DS (ON)} = 0.2 Ω (typ.)
• High forward transfer admittance: |Y_fs| = 16.5 S (typ.)
• Low leakage current: I_DSS = 500 μA (V_DS = 500 V)
• Enhancement mode: V_th = 2.0 to 4.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
500
V
500
V
±30
V
23
A
92
150
W
759
mJ
23
A
15
mJ
150
°C
-55 to 150
°C
1. GATE
2. DRAIN (HEATSINK)
3. SOURCE
JEDEC
―
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch-c)}
0.833
°C/W
Thermal resistance, channel to ambient
R_{th (ch-a)}
50
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 2.44 mH, I_AR = 23 A, R_G = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
3
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29