2SK3935_09 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator Applications

2SK3935
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3935
Switching Regulator Applications
Unit: mm
z Low drain-source ON resistance:
R_{DS (ON)} = 0.18 Ω (typ.)
z High forward transfer admittance:
|Y_fs| = 10 S (typ.)
z Low leakage current: I_DSS = 100 μA (max) (V_DS = 450 V)
z Enhancement model: V_th = 2.0 to 4.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse(Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
450
V
450
V
±30
V
17
A
68
A
50
W
919
mJ
17
A
5
mJ
150
°C
−55 to 150
°C
1: Gate
2: Drain
3: Source
JEDEC
−
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch−c)}
2.5
°C / W
Thermal resistance, channel to
ambient
R_{th (ch−a)}
62.5
°C / W
1
Note 1: Ensure that the channel temperature does not exceed 150°C during
use of the device.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 5.3 mH, R_G = 25 Ω, I_AR = 17 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
3
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29