2SK3880 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type

2SK3880
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
2SK3880
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.)
• High forward transfer admittance: |Yfs| = 5.2 S (typ.)
• Low leakage current: IDSS = 100μA (max) (VDS = 640 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AR
I_AR
E_AR
T_ch
T_stg
Rating
Unit
800
V
800
V
±30
V
6.5
A
19.5
80
W
375
mJ
6.5
A
8
mJ
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
1
Thermal resistance, channel to case
R_{th (ch-c)}
1.56
°C/W
Thermal resistance, channel to ambient
R_{th (ch-a)}
41.6
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
3
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 16.1 mH, R_G = 25 Ω, I_AR = 6.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2005-01-18