2SK3878 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N-Channel MOS Type Switching Regulator Applications

2SK3878
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)
2SK3878
Switching Regulator Applications
• Low drain-source ON resistance: R_{DS (ON)} = 1.0 Ω (typ.)
• High forward transfer admittance: ⎪Y_fs⎪ = 7.0 S (typ.)
• Low leakage current: I_DSS = 100 μA (max) (V_DS = 720 V)
• Enhancement model: V_th = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
900
V
900
V
±30
V
9
A
27
150
W
778
mJ
9
A
15
mJ
150
°C
−55~150
°C
1. GATE
2. DRAIN (HEATSINK)
3. SOURCE
JEDEC
―
JEITA
SC-65
TOSHIBA
2−16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch-c)}
R_{th (ch-a)}
0.833
50
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C
1
during use of the device.
Note 2: V_DD = 90 V, T_ch = 25°C, L = 17.6 mH, R_G = 25 Ω, I_AR = 9 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
3
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-13