2SK3863_10 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator Applications

2SK3863
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3863
Switching Regulator Applications
• Low drain-source ON-resistance: R_{DS (ON)} = 1.35 Ω (typ.)
• High forward transfer admittance: |Y_fs| = 2.8 S (typ.)
• Low leakage current: I_DSS = 100 μA (V_DS = 500 V)
• Enhancement model: V_th = 2.0 to 4.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
6.8 MAX.
5.2 ± 0.2
Unit: mm
0.6 MAX.
0.95 MAX.
0.6 ± 0.15
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
500
V
500
V
±30
V
5
A
20
40
W
180
mJ
5
A
4
mJ
150
°C
-55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch-c)}
3.125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C
during use of the device.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 12.2 mH, I_AR = 5 A, R_G = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
2.3 2.3
0.6 MAX.
123
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
2
1
3
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B5B
Weight: 0.36 g (typ.)
6.8 MAX.
5.2 ± 0.2
0.6 MAX.
0.6 ± 0.15
0.95 MAX.
0.6 ± 0.15
2.3 2.3
123
2.3 2.3
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
0.6 MAX.
2
1
3
JEDEC
―
JEITA
―
TOSHIBA
2-7B7B
Weight: 0.36 g (typ.)
1
2010-04-13