2SK3846 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications

2SK3846
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOSIII)
2SK3846
Switching Regulator, DC/DC Converter and Motor Drive
Applications
Unit: mm
z Low drain−source ON resistance : R_{DS (ON)} = 12 mΩ (typ.)
z High forward transfer admittance : |Y_fs| = 33 S (typ.)
z Low leakage current : I_DSS = 100 μA (max) (V_DS = 40 V)
z Enhancement mode : V_th = 1.5~2.5 V (V_DS = 10 V, I_D = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
Drain–gate voltage (R_GS = 20 kΩ)
Gate–source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
40
V
40
V
±20
V
26
A
78
A
25
W
63
mJ
26
A
2.5
mJ
150
°C
−55~150
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
R_{th (ch–c)}
R_{th (ch–a)}
5.0
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 25 V, T_ch = 25°C (initial), L = 97 µH, I_AR = 26 A, R_G = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-09-27