2SK3844 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Switching Regulator, DC-DC Converter Applications

2SK3844
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ)
2SK3844
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
Unit: mm
• Low drain-source ON resistance: R_{DS (ON)} = 4.1 mΩ (typ.)
• High forward transfer admittance: |Y_fs| = 63 S (typ.)
• Low leakage current: I_DSS = 100 μA (max)(V_DS = 60 V)
• Enhancement mode: V_th = 2.0 to 4.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc=25℃)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
60
V
60
V
±20
V
45
A
180
45
W
527
mJ
45
A
4.0
mJ
150
°C
−55~150
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch-c)}
R_{th (ch-a)}
2.78
62.5
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V_DD = 25 V, T_ch = 25°C (initial), L = 353 μH, I_AR = 45 A, R_G = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2006-11-17