2SK3843 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications

2SK3843
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOSIII)
2SK3843
Switching Regulator, DC/DC Converter and Motor Drive
Applications
Unit: mm
z Low drain−source ON resistance : R_{DS (ON)} = 2.7 mΩ (typ.)
z High forward transfer admittance : |Y_fs| = 120 S (typ.)
z Low leakage current : I_DSS = 10 μA (max) (V_DS = 40 V)
z Enhancement mode : V_th = 1.5~3.0 V (V_DS = 10 V, I_D = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
Drain–gate voltage (R_GS = 20 kΩ)
Gate–source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
40
V
40
V
±20
V
75
A
300
A
125
W
542
mJ
75
A
12.5
mJ
150
°C
−55~150
°C
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Thermal Characteristics
4
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch–c)}
1.0
°C/W
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 25 V, T_ch = 25°C (initial), L = 100 µH, I_AR = 75 A, R_G = 25 Ω
3
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-09-27