2SK3799 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N-Channel MOS Type Switching Regulator Applications

2SK3799
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
2SK3799
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance
: RDS (ON) = 1.0 Ω (typ.)
High forward transfer admittance : |Yfs| = 6.0 S (typ.)
Low leakage current : IDSS = 100μA (max) (VDS = 720 V)
Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
900
V
900
V
±30
V
8
A
24
A
50
W
1080
mJ
8
A
5
mJ
150
°C
−55~150
°C
Thermal Characteristics
1. Gate
2. Drain
3. Source
JEDEC
—
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
2
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch−c)}
2.5
°C / W
Thermal resistance, channel to
ambient
R_{th (ch−a)}
62.5
°C / W
1
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 30.9 mH, R_G = 25Ω, I_AR = 8 A
3
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Handle with care.
1
2005-01-24