2SK3761 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)

2SK3761
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS )
2SK3761
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.9 (typ.)
• High forward transfer admittance: |Yfs| = 5.0S (typ.)
• Low leakage current: IDSS = 100 A (VDS = 600 V)
• Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
3.84 0.2
3.84 0.2
10₁.₀5_.5m_maa_x x
unit
44..77mmax ax
1.3
1.3
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
1_1..₅5_mm_axax
0.81
0.81 max
0⁰.^.44⁵5
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_{D P}
P_D
E_{A S}
I_AR
E_AR
T_{c h}
T_stg
600
V
600
V
±30
V
6
A
24
74
W
54
mJ
6
A
7.4
mJ
150
°C
-55~150
°C
2.25.544
123
2.7
2.7
1. Gate
2. Drain(HEAT SINK)
3. Source
JEDEC
JEITA
TO-220AB
SC-46
Thermal Characteristics
TOSHIBA
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R_{th (ch-c)}
R_{th (ch-a)}
Max
Unit
1.68
°C/W
83.3
°C/W
Weight : 2.0g(typ.)
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C(initial), L = 2.6 mH, I_AR = 6 A, R_G = 25 Ω
1
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
2004-02-26