2SK370_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK370
2SK370
For Low Noise Audio Amplifier Applications
Unit: mm
• Suitable for use as first stage for equalizer and MC head amplifiers.
• High |Y_fs|: |Y_fs| = 22 ms (typ.) (V_DS = 10 V, V_GS = 0, I_DSS = 3 mA)
• High breakdown voltage: V_GDS = −40 V
• High input impedance: I_GSS = −1 nA (max) (V_GS = −30 V)
• Complementary to 2SJ108
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
V_GDS
−40
V
Gate current
I_G
10
mA
Drain power dissipation
P_D
200
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEITA
TOSHIBA
―
2-4E1C
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.13 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
I_GSS
V_GS = −30 V, V_DS = 0
V _{(BR) GDS} V_DS = 0, I_G = −100 μA
I_DSS
V_DS = 10 V, V_GS = 0
(Note)
V_{GS (OFF)}
⎪Y_fs⎪
C_iss
C_rss
NF (1)
V_DS = 10 V, I_D = 0.1 μA
V_DS = 10 V, V_GS = 0, f = 1 kHz,
I_DSS = 3 mA
V_DS = 10 V, V_GS = 0, f = 1 MHz
V_DG = 10 V, I_D = 0, f = 1 MHz
V_DS = 10 V, I_D = 1.0 mA, R_G = 1 kΩ,
f = 10 Hz
NF (2)
V_DS = 10 V, I_D = 1.0 mA, R_G = 1 kΩ,
f = 1 kHz
Note: I_DSS classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA
Min Typ. Max Unit
⎯
⎯ −1.0 nA
−40 ⎯
⎯
V
2.6
⎯
20
mA
−0.2
⎯
−1.5
V
8
22
⎯
mS
⎯
30
⎯
pF
⎯
6
⎯
pF
⎯
1.0
10
dB
⎯
0.5
2
1
2007-11-01