2SK369_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK369
2SK369
For Low Noise Audio Amplifier Applications
• Suitable for use as first stage for equalizer and MC head amplifiers.
• High |Y_fs|: |Y_fs| = 40 mS (typ.) (V_DS = 10 V, V_GS = 0, I_DSS = 5 mA)
• High breakdown voltage: V_GDS = −40 V (min)
• Super low noise: NF = 1.0dB (typ.)
(V_DS = 10 V, I_D = 5 mA, f = 1 kHz, R_G = 100 Ω)
• High input impedance: I_GSS = −1 nA (max) (V_GS = −30 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
V_GDS
I_G
P_D
T_j
T_stg
−40
V
10
mA
400
mW
125
°C
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
TO-92
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
SC-43
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-5F1D
absolute maximum ratings.
Weight: 0.21 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
(Note 2)
I_GSS
V_GS = −30 V, V_DS = 0
V _{(BR) GDS} V_DS = 0, I_G = −100 μA
I_DSS
V_DS = 10 V, V_GS = 0
(Note 1)
V_{GS (OFF)}
⎪Y_fs⎪
C_iss
C_rss
NF (1)
V_DS = 10 V, I_D = 0.1 μA
V_DS = 10 V, V_GS = 0, f = 1 kHz,
(I_DSS = 5 mA)
V_DS = 10 V, V_GS = 0, f = 1 MHz
V_GD = −10 V, I_D = 0, f = 1 MHz
V_DS = 10 V, R_G = 100 Ω, I_D = 5 mA,
f = 100 Hz
NF (2)
V_DS = 10 V, R_G = 100 Ω, I_D = 5 mA,
f = 1 kHz
⎯
⎯ −1.0 nA
−40 ⎯
⎯
V
5.0
⎯
30
mA
−0.3
⎯
−1.2
V
25
40
⎯
mS
⎯
75
⎯
pF
⎯
15
⎯
pF
⎯
5
10
dB
⎯
1
2
Note 1: I_DSS classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, V: 14.0~30.0 mA
Note 2: Use this in the low voltage region (VDS < 15 V) for low noise applications.
1
2007-11-01