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2SK367_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon N Channel Junction Type For Audio, High Voltage Amplifier and Constant Current Applications | |||
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK367
For Audio, High Voltage Amplifier and Constant Current
Applications
2SK367
Unit: mm
⢠High breakdown voltage: VGDS = â100 V (min)
⢠High input impedance: IGSS = â1.0 nA (max) (VGS = â80 V)
⢠Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDS
IG
PD
Tj
Tstg
â100
V
10
mA
200
mW
125
°C
â55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
â
JEITA
â
TOSHIBA
2-4E1B
Weight: 0.13 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
IGSS
VGS = â80 V, VDS = 0
V (BR) GDS VDS = 0, IG = â100 μA
IDSS
VDS = 10 V, VGS = 0
(Note)
VGS (OFF) VDS = 10 V, ID = 0.1 μA
âªYfsâª
VDS = 10 V, VGS = 0, f = 1 kHz
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
Crss
VDS = 10 V, ID = 0, f = 1 MHz
NF
VDS = 10 V, VGS = 0, RG = 100 kΩ,
f = 100 Hz
Note: IDSS classification O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
Min Typ. Max Unit
â¯
⯠â1.0 nA
â100 â¯
â¯
V
0.6
â¯
6.5 mA
â0.4
â¯
â3.5
V
1.5 4.6
â¯
mS
â¯
13
â¯
pF
â¯
3
â¯
pF
â¯
0.5
â¯
dB
1
2007-11-01
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