2SK3670 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Chopper Regulator and DC−DC Converter Applications

2SK3670
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3670
Chopper Regulator and DC−DC Converter Applications
z 2.5V-Gate Drive
z Low drain-source ON resistance: R_{DS (ON)} = 1.0 Ω (typ.)
z High forward transfer admittance: |Y_fs| = 2.1 S (typ.)
z Low leakage current: I_DSS = 100 μA (max) (V_DS = 150 V)
z Enhancement mode: V_th = 0.5~1.3 V (V_DS = 10 V, I_D =200μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
DC
(Note 1)
Drain current
Pulse(t≦5s)
(Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
I_DP
P_D
E_AS
I_AR
E_AS
T_ch
T_stg
150
V
150
V
±12
V
0.67
1
A
3
0.9
W
41
mJ
0.67
A
0.09
mJ
150
°C
−55~150
°C
Unit: mm
JEDEC
TO-92MOD
JEITA
—
TOSHIBA
2-5J1C
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
3
Thermal resistance, channel to
ambient
R_{th (ch−a)}
138
°C / W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V_DS = 50V、T_ch = 25℃(initial)、L = 135mH、I_AR = 0.67A、R_G = 25Ω
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Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
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2007-07-24