2SK366_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications

TOSHIBA Effect Transistor Silicon N Channel Junction Type
2SK366
For Audio Amplifier, Analog-Switch, Constant Current
and Impedance Converter Applications
2SK366
Unit: mm
• High voltage: V_GDS = −40 V
• High input impedance: I_GSS = −1.0 nA (max) (V_GS = −30 V)
• Low R_{DS (ON)}: R_{DS (ON)} = 50 Ω (typ.) (I_DSS = 5 mA)
• Small package
• Complementary to 2SJ107
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
V_GDS
−40
V
Gate current
I_G
10
mA
Drain power dissipation
P_D
200
mW
Junction temperature
Storage temperature range
T_j
125
°C
T_stg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-4E1C
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.13 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Drain-source ON resistance
I_GSS
V _{(BR) GDS}
V_GS = −30 V, V_DS = 0
V_DS = 0, I_C = −100 μA
⎯
⎯ −1.0 nA
−40 ⎯
⎯
V
I_DSS
V_DS = 10 V, V_GS = 0
(Note 1)
2.6
⎯
20
mA
V_{GS (OFF)} V_DS = 10 V, I_D = 0.1 μA
−0.2
⎯
−1.5
V
⎪Y_fs⎪
V_DS = 10 V, V_GS = 0, f = 1 kHz (Note 2) 12
28
⎯
mS
C_iss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
30
⎯
pF
C_rss
V_DG = 10 V, I_D = 0, f = 1 MHz
⎯
6
⎯
pF
R_{DS (ON)} V_DS = 10 mV, V_GS = 0
(Note 2) ⎯
50
⎯
Ω
Note 1: I_DSS classification GR: 2.6~6.5 mA, BL: 6~12 mA, V: 10~20 mA
Note 2: Condition of the typical value I_DSS = 5 mA
1
2007-11-01