2SK3669 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulators, for Audio Amplifier and Motor Drive Applications

2SK3669
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VII)
2SK3669
Switching Regulators, for Audio Amplifier and Motor
Drive Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 95 mΩ (typ.)
· High forward transfer admittance: |Yfs| = 6 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 100 V)
· Enhancement-mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kW)
Gate-source voltage
DC
(Note 1)
Drain current
Pulse (t_w ≤ 10 ms)
(Note 1)
Pulse (t_w ≤ 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy
(Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
IDP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
100
V
100
V
±20
V
10
15
A
28
20
W
280
mJ
10
A
2
mJ
150
°C
-55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
R_{th (ch−c)}
R_{th (ch−a)}
6.25
125
°C/ W
°C/ W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: V_DD = 50 V, T_ch = 25°C (initial), L = 3.44 mH, I_AR = 10 A, R_G = 25 W
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2003-03-12