2SK3658 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive

2SK3658
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L²âˆ’π−MOSV)
2SK3658
DC−DC Converter, Relay Drive and Motor Drive
Applications
z Low drain−source ON resistance : R_{DS (ON)} = 0.23 Ω (typ.)
z High forward transfer admittance : |Y_fs| = 2.0 S (typ.)
z Low leakage current
: I_DSS = 100 μA (max) (V_DS = 60 V)
z Enhancement−mode
: V_th = 0.8 to 2.0 V (V_DS = 10 V, I_D = 1mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Drain power dissipation
(Note 2)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
T_ch
T_stg
60
V
60
V
±20
V
2
A
6
0.5
W
1.5
W
150
°C
−55 to 150
°C
JEDEC
JEITA
2
1
3
⎯
SC-62
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
TOSHIBA
2-5K1B
Weight: 0.05 g (typ.)
Note 3:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Thermal resistance, channel to ambient R_{th (ch−a)}
250
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit
°C / W
Marking
Lot no.
Z
H
Product no. (abbr.)
Week of manufacture
Year of manufacture: last decimal digit of the year of manufacture
1
2006-11-17